Michael Schmitz

Michael Schmitz has a diverse work experience, primarily focused on technology development and research in the field of graphene and heterostructure fabrication. From 2012 to 2015, they worked as a Studentische Hilfskraft at RWTH Aachen University, where they set up an LPCVD laboratory for growing high-quality monolayer graphene and developed a dry CVD-graphene transfer process. Michael also contributed to the fabrication of hBN/CVD-Gr/hBN heterostructures with high carrier mobilities. From 2015 to 2017, they served as a Wissenschaftliche Hilfskraft, further refining the CVD parameters for bilayer graphene growth and adapting the dry transfer process. During this time, they achieved the fabrication of high-quality hBN/CVD-BLG/hBN heterostructures with record-breaking carrier mobilities. Since 2017, Michael has been a Wissenschaftlicher Mitarbeiter at RWTH Aachen University, focusing on investigating the role of water-mediated oxidation in dry-transferring CVD-graphene and implementing modifications in the CVD system. Michael has also been dedicated to improving heterostructure fabrication techniques for achieving the highest quality CVD-graphene transport devices and proving the equivalence of intrinsic quality between CVD-graphene and exfoliated graphene. Currently, Michael is working at AIXTRON SE as a Technology Development Engineer, where they are involved in forging the DNA of future AIXTRON systems, technology scouting, integration, and challenging the seemingly impossible.

Michael Schmitz attended St. Michael Gymnasium Bad Münstereifel from 2002 to 2011, where they obtained their Abitur. Michael then went on to RWTH Aachen University, where they earned a Bachelor of Science degree in Physics from 2011 to 2015. From 2015 to 2017, they continued their studies at RWTH Aachen University, obtaining a Master of Science degree in Physics. Currently, Michael is pursuing a Doctor of Philosophy degree in Physics at RWTH Aachen University, which they started in 2017 and is expected to complete in 2023.