Irina Alam

Irina Alam possesses extensive experience in semiconductor engineering, particularly in the realm of memory technologies. Irina worked as a Product Engineer at Micron Technology from July 2014 to July 2016, focusing on test development and debugging for NAND-based eMMC devices. Prior to this role, Irina held positions as a Product Engineering Intern and a Research Intern at Micron, where contributions included investigating DRAM failures and optimizing memory architectures. Additionally, Irina gained experience as a DRAM Engineer and Research Engineer Intern at Apple, and as a Hardware Engineering Intern at Google, where involvement in design space exploration of memory resiliency schemes and Error Correction Code tools was significant. Irina's academic journey includes a PhD in Electrical and Electronics Engineering and a Master of Science in Electrical and Computer Engineering from the University of California, Los Angeles, complemented by a Bachelor's degree from Nanyang Technological University.