Daniel Reed

Daniel Reed is a seasoned scientist and engineer specializing in semiconductor memory design, magnetic devices, and physics education. Currently serving as a Senior Principal Scientist at Broadcom since June 2009, Daniel focuses on memory design, testing, and characterization, primarily for SRAM products. Previous roles include Senior Physicist at NVE Corporation, where magnetic sensor testing and production system development took precedence, and Principal Engineer positions at Seagate Technology and Honeywell, leading memory testing groups and evaluating MRAM product development. Daniel also held a postdoctoral role at the Naval Research Laboratory researching magnetic "spin transistor" devices and served as an adjunct faculty member at Argosy University, teaching introductory physics. Educational qualifications include a Ph.D. in Physics from Caltech, a B.S. in Physics and Math from the University of Missouri-Columbia, and ongoing pursuit of a Master of Education.