Hamed Ghassemi is a Senior Design Engineer with extensive experience in high-speed, low-power microprocessor memory array designs. They have a proven track record, having achieved 100% success on their implemented designs on the first silicon. Hamed has held key positions at Freescale Semiconductor, NXP Semiconductors, and Broadcom Inc., where they specialized in SRAM memory design, power analysis, and validation of custom memory arrays across various technology nodes. They hold a BS/MS in Electrical Engineering from the University of Arizona.
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