Hady Yacoub

Hady Yacoub is currently the Head of the InP device lab at Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, where they focus on THz InP-based HBTs. Hady previously served as a Postdoc at RWTH Aachen University and held the position of Group Lead and Research Scientist at Ferdinand-Braun-Institut. They earned a Dr.-Ing in Electrical and Electronics Engineering from RWTH Aachen University and a Master of Science in Microelectronics from Universität Ulm, following a Bachelor’s degree in Electrical and Electronics Engineering from The German University in Cairo. Their research extends to high voltage GaN-based transistors and processing of AlInN-GaN MOS-HEMTs for high temperature applications.