André Stegner is a seasoned leader in the field of power semiconductors, currently serving as Vice President of R&D at Infineon Technologies. They have held various roles at Infineon, including Director and Senior Director of R&D, focusing on technology development for IGBT and diode technologies. André earned a Dr. rer. nat. in Physics from Technische Universität München, where they also completed a Diplom in Physics. Additionally, they undertook studies at Keio University in Japan.
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