Barbara Eichinger has a robust academic background in material science, having earned a Bachelor of Science and a Master of Science from Technische Universität Wien, followed by a PhD from Karl-Franzens-Universität Graz. Their professional journey includes positions as a Technical Intern at FFG Österreichische Forschungsförderungsgesellschaft mbH and as an intern in Mechanical Engineering at RUAG Space AB, where they investigated piezo-electric properties of BaTiO3 capacitors for aerospace applications. Barbara has also contributed to the semiconductor industry through various roles at Infineon Technologies, culminating in a focus on funding management and technology development for Si and SiC power semiconductor technologies in their current position.
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