Thomas Aichinger

Thomas Aichinger is a highly experienced engineer specializing in technology development for silicon carbide (SiC) at Infineon Technologies, where a professional career spans over a decade, advancing from Senior Engineer to Senior Principal Engineer. Aichinger's research focus includes the reliability of Si Power MOSFETs, complemented by a strong academic background, which includes a Postdoctoral position at Penn State University and a PhD in Electrical and Electronics Engineering from Technische Universität Wien. Aichinger also holds a Master's degree in Physics from the University of Graz.