Shridhar Hegde

Shridhar Hegde is a Group Leader in PTD Epitaxy at Intel Corporation, where they oversee strained Si and MOS S/D selective area epitaxy for advanced semiconductor nodes. Previously, Shridhar served as a Staff Engineer and Process TD Engineer at Intel, focusing on medium/high current ion implant processes at various technology nodes. They also gained experience as a Graduate Research Assistant at the University at Buffalo, researching feromagnetic semiconductor structures for spintronics, and interned at Brookhaven National Laboratory conducting experiments on magnetic semiconductors. Shridhar is currently pursuing a Bachelor of Engineering in Mechanical Engineering at the Birla Institute of Technology and Science, Pilani.