Jun Yu is a Senior Engineer specializing in 3D NAND Quality and Reliability at Micron Technology. They have extensive experience in the data storage industry and emerging memory R&D, having previously worked as a Scientist at the Institute of Microelectronics, A*STAR, where they contributed to the development of STT-MRAM technology. Jun also established roadmaps for emerging memories at the Nano-Electronics National Key Laboratory, and has experience managing projects related to memory technologies. Jun holds a Ph.D. in Materials Science & Engineering from the National University of Singapore and a Bachelor's degree in the same field from Huazhong University of Science and Technology.
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