We provide high-rel electronic capabilities for extreme environments by fabricating devices from the Wide Band-Gap Semiconductor Silicon Carbide (SiC).  This results in superlative stability at temperatures beyond those possible with conventional silicon or silicon on insulator components. SiC devices also demonstrate superlative radiation tolerance, as well as high efficiency, low losses and fast switching in power electronic applications. These capabilities open up new markets in the extreme environments that are common in the automotive, oil & gas, geothermal, aerospace, space and military sectors. The SiC devices are confined to value added, high performance applications where the added functionality is critical.  The technology offers the possibility of remote monitoring in extreme environments, something that is not possible using conventional electronics and hence enabling the Internet of Everything Everywhere (IoEE).

Nascent Semiconductor

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