Patrick H. is a Senior Principle Engineer specializing in RF GaN device technology at NXP Semiconductors since 2021. Previously, Patrick served as Director of eGaN Device R&D at Efficient Power Conversion and held various research positions at imec and the Massachusetts Institute of Technology, where significant advancements were made in GaN technology. Patrick earned a Master's in Nanoscience and Nanotechnology from KU Leuven and is currently pursuing a degree in Electrical Engineering and Computer Science at MIT.
This person is not in the org chart
This person is not in any teams
This person is not in any offices