Hochul Lee is a highly experienced senior staff engineer currently at Qualcomm since October 2017, where previous roles included staff engineer. Prior to Qualcomm, Hochul led the circuit design and testing team at Inston Inc. and contributed to the development of MeRAM™, a patented nonvolatile memory technology. Hochul's academic background includes a PhD from UCLA, where research focused on low-power, area-efficient circuit designs and advanced memory technologies, including work on Magnetoelectric RAM (MeRAM) and spintronics. Earlier experience includes circuit design work for NAND flash memory at Samsung Electronics. Hochul holds a Master of Science from Seoul National University and a Bachelor of Science from Korea University, both in Electrical Engineering.
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