Rayton is working on a semiconductor breakthrough that addresses one of the biggest challenges in AI: energy consumption. Our proprietary manufacturing process uses GaN and SiC materials to reduce chip power usage by up to 70%, while enabling 10x greater yield from existing wafer supplies. With AI datacenter demand surging, our approach offers a scalable, cost-effective way to meet infrastructure needs without adding strain to the grid.

Rayton uses a high-energy proton beam to exfoliate a 2-micron-thick active layer of semiconductor material—such as Gallium Nitride (GaN) or Silicon Carbide (SiC)—from a donor wafer.

This ultra-thin layer is then precision-bonded onto a low-cost handle wafer, drastically reducing the amount of expensive material required per wafer. The original donor wafer is reused up to 10 times, yielding a 10x increase in output from the same starting material.

This process leverages a state-of-the-art proton particle accelerator, bringing advanced physics into the heart of semiconductor manufacturing for unmatched precision and material efficiency. The result is a cost-effective, high-performance substrate platform that supports the growing demands of AI, electric vehicles, and advanced photonics.

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