Hossein Rabiee

Hossein Rabiee, Ph.D., is a Senior Staff Memory Reliability Engineer at Solidigm, specializing in NAND Array Reliability. They earned a Ph.D. in Electrical & Computer Engineering from the University of Nebraska-Lincoln and have over six years of experience in the field. Previously, they served as a Postdoctoral Research Scientist at the University of California, Davis, and held roles at Intel Corporation, where they led the reliability development of high-capacity SSDs. Hossein also worked as a PhD Research Assistant, focusing on GaN FET/HEMT transistors and photodetectors.