Hao Yang is a Process Development Engineer at Texas Instruments since September 2019. Prior experience includes a role as a Postdoctoral Researcher and Research Assistant at The Ohio State University from August 2013 to August 2019, focusing on high energy and power graphene-based supercapacitors and GaN high electron mobility transistor (HEMT) fabrication and characterization. Research work involved developing carbon-based electrochemical energy storage devices and utilizing various nanofabrication techniques. Hao Yang holds a Doctor of Philosophy (Ph.D.) in Electrical and Electronics Engineering with a specialization in Energy Storage and Carbon Material, and a Master's degree in the same field from The Ohio State University, along with a Bachelor of Science (B.S.) in Physics from Southeast University.
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