Amit Feldman has extensive experience in device research and development, with a Bachelor's degree in Electrical and Electronics Engineering from Technion - Israel Institute of Technology, completed in 2021. Amit's professional background includes serving in the MEMS group at Rafael Advanced Defense Systems from September 2014 to October 2016, where responsibilities involved setting and calibrating electrical characterization systems and operating test equipment. Amit also worked as a student employee at Technion in September 2020, focusing on fabrication and measurement of TMDs devices. Most recently, Amit has held positions as a Device R&D Engineer and Senior Device R&D Engineer at Tower Semiconductor in July 2025, contributing to the Power Management and Mixed Signals R&D group, engaging in device development, TCAD simulations, and participating in technology transfers between sites in Japan and the USA. Skills include hands-on experience with Virtuoso, large data analysis in JMP, and effective communication within international teams.
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