ASM International NV
Chuandao Wang is a Sr Process Engineer at ASM, with extensive experience in atomic layer deposition (ALD) process development for TiWN and TiN films used in DRAM applications. Since joining ASM in August 2014, significant contributions include optimizing mechanical performance and oxidation resistance of bottom electrode films, developing pure ALD processes for top electrode films, and creating metal-insulator-metal leakage test vehicles. Prior to ASM, Chuandao Wang earned a PhD in Materials Science and Engineering from Northwestern University, where involvement in a DOE project focused on nanoparticle and thin film synthesis led to advancements in catalytic performance and thorough characterization techniques. Additional experience at Tulane University further strengthened expertise in surface science and contamination removal methods for multilayer mirror systems. Educational background also includes a Master’s degree from Tulane University and a Bachelor’s degree from the University of Science and Technology of China.
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ASM International NV
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ASM International N.V. is a supplier of wafer processing equipment, primarily for semiconductor manufacturing industry. The Company designs, manufactures and sells equipment and services to its customers for the production of semiconductor devices, or integrated circuits (ICs). The Company operates in two segments, which include Front-end and Back-end. The Front-end segment manufactures and sells equipment used in wafer processing, encompassing the fabrication steps in which silicon wafers are layered with semiconductor devices. The front-end segment includes manufacturing, service, and sales operations in Europe, the United States, Japan and South East Asia. The Back-end segment manufactures and sells equipment and materials used in assembly and packaging, encompassing the processes in which silicon wafers are separated into individual circuits. The Company supplies equipment to the manufacturers of analog semiconductor devices primarily for the deposition of thin films.