Gary Bulman

Gary Bulman has a diverse and extensive work experience spanning several industries. Gary began their career at Sandia National Laboratories as a Member of the Technical Staff, where they focused on the development of photodetector structures in InGaAs/GaAs strained-layer superlattice materials. During their time at Sandia, they designed device structures and characterization systems and made significant contributions to the understanding of impact ionization coefficients in these materials.

Gary then moved on to work as a Staff Research Physicist at Amoco Corporation, where they specialized in the development of high-power multi-stripe GaAs laser diode arrays. Gary designed device structures and supervised the operation of an automated GaAs liquid phase epitaxy system. Gary also developed a Si Impurity Induced Layer Disordering process used in the fabrication of multi-stripe index-guided GaAs lasers.

After that, Gary worked as a Senior Scientist at Cree, where they conducted research and development on SiC LEDs, InGaN LEDs, InGaN Laser diodes, and GaN/AlGaN heterojunction photodiodes. Gary served as the Principal Investigator on a DARPA GaN laser diode development program, leading a team that successfully demonstrated the first pulsed and continuous (cw) operation of a blue InGaN-based laser on SiC. Gary also developed automated systems for optical layer thickness measurement, photoluminescence mapping, electroluminescence wafer mapping, and scanning electron microscope image analysis.

Gary later joined RTI International as the Program Manager for Optoelectronic and Thermoelectric Cooling Programs. In this role, they managed research and development efforts in thermoelectric thin-film cooling devices and led projects funded by the Department of Defense. Gary also developed programs, project teams, and proposals to address the needs of potential government and commercial clients.

Gary also worked as a Consultant for Nextreme Thermal Solutions, where they assisted in the structural and electrical characterization of thin-film thermoelectric devices and evaluated the quality of bonding processes used in the fabrication of thin-film superlattice thermoelectric devices.

At Ohio Semitronics, Inc., Gary served as a Consultant and was involved in trouble-shooting material quality issues in InAs used in Hall Effect devices. Gary traced causes of reduced quality high-purity InAs and developed improved processes and specified new equipment and materials to eliminate the problems.

Gary'smost recent role was as the Research Program Director at GridBridge, Inc., where they directed research programs for grid energy storage systems.

Overall, Gary Bulman has a wealth of experience in research and development, program management, and consulting across various industries, particularly in the fields of optoelectronics, thermoelectrics, and semiconductors.

Gary Bulman obtained their Bachelor of Science (B.S.) degree in Physics from Miami University between 1973 and 1977. Gary then pursued further studies at the University of Illinois Urbana-Champaign, where they earned their Master of Science (M.S.) degree in Physics from 1977 to 1979. Gary continued their education at the same university and obtained their Ph.D. in Physics from 1979 to 1983.