Ramin Ghodsi is a seasoned professional with extensive experience in the semiconductor industry, currently serving as Corporate Vice President of Design Engineering and Non-Volatile Memory at Micron Technology since 1999. Ghodsi has held various leadership roles at Micron, including Vice President of Design for the NAND Solution Group and Senior Director of Design, where responsibilities included managing NAND design and device modeling teams. Prior to Micron, Ghodsi worked at Cypress Semiconductor as a Staff Technology Engineer, focusing on CMOS technology for SRAM products, and at Quality Semiconductor as a Senior Device Engineer, specializing in CMOS device design and characterization. Academic credentials include a PhD and a Bachelor of Engineering (honors) in Electrical Engineering from The University of Queensland.
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