Seohee Kim is a Principal Engineer at Qualcomm, where they focus on memory circuit design and power management architecture. With a strong background as a Senior Staff Engineer, Seohee has expertise in SRAM memory circuit design, product testing, and memory model generation. They earned a Doctor of Philosophy (Ph.D.) in Electrical and Computer Engineering from The University of Texas at Austin, following a Master of Science and Bachelor of Science in Electrical Engineering from Seoul National University. Seohee's prior experience includes roles at Samsung Electronics and The University of Texas at Austin, where they conducted significant research in semiconductor electronics and memory development.
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