Urvashi Sharma

Urvashi Sharma is a research scholar at Lovely Professional University since August 2018, focusing on the development of high-κ dielectrics for gate-oxide applications in logic and memory devices. Previously, Urvashi served as a Project Research Associate on a project titled "CMOS Compatible Ferroelectric Tunnel Junction for Universal Memory," which was funded by the Science and Engineering Research Board, Department of Science and Technology, Government of India. During a prior tenure at Gautam Buddha University from January 2017 to January 2020, Urvashi was an IEEE student member and served as the chair of the Women In Engineering (WIE) initiative for the IEEE GBU student branch. Urvashi holds a Master of Technology in Power Electronics from Gautam Buddha University (2016-2018) and a Bachelor of Technology in Electrical and Electronics Engineering from COER University (2012-2016).