TPSCo
Mr. Sasaki was appointed Chief Technology Officer of TPSCo in April 2014 at the time of the company’s founding. Previously he was Director of the ULSI Process Technology Development Center at Panasonic Corporation.
He led the 300mm Fab start-up in Uozu and developed CMOS processes from 65nm down to 32nm, which offered the world’s first manufacturable “Gate First” High-k/Metal gate technology. He also led frontside illumination image sensors with light pipe technology, RF GaAs technology, and many others.
He joined Matsushita Electric Industrial Co., Ltd. in 1987 where he contributed a great deal of new process development through his remarkable dry etching expertise.
Mr. Sasaki received his B.S. degree in Chemistry from Kyoto University, Kyoto, Japan in1987.
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TPSCo
Tower Partners Semiconductor Co. Ltd. (TPSCo)’s fabs in Hokuriku, Japan have been manufacturing large scale integrated circuits (ICs) for over 35 years and more than 750 million ICs for automotive products (Grade 0, 1 & 2) have been produced. Areas of process technology focus include: high dynamic range image sensors, (CIS and CCD), integrated power devices, (BCD, SOI, and LDMOS), high frequency Silicon RFCMOS and compound semiconductors, (GaAs, GaN, and SiC). With over 150 qualified silicon process flows on 200mm and 300mm substrates from super micron to 45nm as well as internal back end processing, assembly and test services, TPSCo enables both IDMs and fabless companies with unparalleled semiconductor manufacturing quality and technology, including in-house turnkey services.