Ram Asra is a Sr. Staff Engineer in R&D specializing in SiGe HBT Research and Development at Tower Semiconductor. Previously, Ram held positions such as Sr. Engineer at GLOBALFOUNDRIES, focusing on 14nm FinFET technology, and Sr. Device Engineer at Samsung Austin Semiconductor, where they worked on FinFET processes and technology. Ram completed a Ph.D. in Electrical Engineering at the Indian Institute of Technology, Bombay, after earning a Master's degree in VLSI Microelectronics from Kurukshetra University. Ram's earlier experiences include internships at IBM India and CSIR-CEERI, where they focused on advanced semiconductor devices and logic synthesis for speech conversion.
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