Jyothi Ambati

Jyothi Ambati is a seasoned research scientist with extensive experience in power products engineering and semiconductor materials, currently employed at Wolfspeed since July 2020. Ambati specializes in silicon carbide (SiC) defects and their implications on device performance, focusing on defect reduction and process optimization for SiC MOSFET and Schottky devices. Previous positions include roles at Cree, where Ambati contributed to LED product innovations and improved manufacturing processes, and REC Silicon, where significant process improvement initiatives were led in silane manufacturing. Ambati holds a PhD in Chemical Engineering from the University of Kentucky and a B.E. in Chemical Engineering from the Birla Institute of Technology and Science, Pilani, with key skills encompassing statistical data analysis, project management, technical support, and process chemistry.