Kristijonas Vizbaras

His field of expertise encompasses molecular beam epitaxy of III-V semiconductors, with a special focus on arsenides, phosphides and antimonides, where his innovations have resulted in a number of world-record devices, such as room-temperature type-I GaSb lasers down to 3.8 µm and extremely low-resistive tunnel junctions. He has BSc in EE from Vilnius University (Lithuania), MSc in Physics from Royal Institute of Technology (Sweden) and was a doctoral candidate at Technische Universität München (Germany) prior starting BROLIS. He has authored and co-authored more than 50 publications in leading scientific technical journals and conference proceedings. Kristijonas Vizbaras has 3 granted US patents and 17 patent applications pending.