Daniel Nilsson is a Senior Staff Engineer specializing in Development Engineering GaN epitaxy at Infineon Technologies, a position they have held since 2021. They previously worked as a GaN engineer at IQE and as a GaN engineer at SweGaN AB. Daniel completed their PhD in Material Science and conducted MOCVD development of AlGaN/GaN based HEMT structures as a postdoctoral fellow at Linköping University, where they were also a PhD student focusing on high-Al-content AlGaN alloys. Earlier in their career, Daniel contributed to semiconductor materials development at Anvil Semiconductors Ltd. and taught mathematics and chemistry at Gullstensskolan.
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