Peter Kanschat has extensive experience in research and development within the power electronics industry, particularly at Infineon Technologies, where roles included Senior R&D Manager, R&D Director, and Vice President of Research and Development, overseeing substantial teams and multiple international locations. Notable contributions involve leading the development of high-power IGBT, Thyristor, and Diode Stacks, as well as innovative Frontend Technologies such as SiC MOSFETs. Prior to Infineon, Peter held positions at EUPEC GmbH in project management and R&D, focusing on automotive and low power IGBT modules. Academic credentials include a Ph.D. in Physics from Philipps-Universität Marburg and a Diplom in Physics from Carl von Ossietzky Universität Oldenburg.
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