Sinan Goktepeli

Sinan Goktepeli has extensive work experience in the semiconductors industry. Sinan is currently working at IQE as the Head of Design Services, where they focus on solidifying IQE's position as a global leader in RF epi wafers. Sinan'sresponsibilities include identifying new opportunities, assisting partners in determining epi wafer and device properties, and pursuing collaborations. Prior to this, Sinan worked as the Director of Technology Development at pSemi, A Murata Company, where they oversaw roadmapping, provided strategic vision, and developed pSemi RF technologies. Sinan reported directly to the CEO and collaborated closely with executives from pSemi and Murata. Sinan also has experience as the Principal Manager of RFFE Technologies at Qualcomm, where they led teams responsible for technology development, CAD, sustaining, and modeling. Sinan directed the production of a large volume of wafers and established roadmaps to support business targets. Earlier in their career, Sinan served as a Staff Device Engineer at Peregrine Semiconductor, contributing to the development of UltraCMOS technologies. Sinan also worked as a Senior Lead Engineer at Samsung Austin Semiconductor, supervising and mentoring teams in processor production and leading the launch of a semiconductor fab. Sinan has entrepreneurship experience as the owner of Xen Semiconductor. Additionally, they worked at NXP during their acquisition of Freescale Semiconductor, holding various roles as a Senior Device Engineer, Device Engineer, and Device/Process Integration/TCAD Engineer.

Sinan Goktepeli completed their education with a Ph.D. in Mechanical Engineering from The University of Texas at Austin, from 1996 to 2000. Prior to that, they obtained an M.S. in Nuclear Engineering from Hacettepe University, where they had also completed their undergraduate education, earning a B.S. in Nuclear Engineering from 1988 to 1993.