Andrew Edwards

Andrew Edwards has a diverse work experience spanning over two decades. Andrew started their career as an Engineer and Production Manager at Sensitron Semiconductor, specializing in high reliability silicon pn diodes and Schottky diode production. In 2002, they joined ASEE as a Postdoctoral Research Fellow, where they focused on fabricating GaN on SiC HEMTs and developing a method to model these devices in TCAD.

Subsequently, Edwards worked at Nitronex Corp as a GaN Device Engineer, leading the development of accurate TCAD models and large signal models for GaN on Silicon RF-HEMTs. Andrew also developed a small signal model that enabled detailed process control based on intrinsic device parameters.

In 2009, Edwards joined International Rectifier as a GaN Device Engineer, where they played a key role in developing power GaN HEMTs with voltage operations ranging from 30V to 1200V. Andrew also led the medium voltage design team, resulting in the commercialization of a Class D audio product.

In 2014, Edwards joined Toshiba America Electronic Components, Inc. as a Senior GaN Device Engineer, contributing to the development of GaN devices. Their work here ended in 2016.

Lastly, Edwards joined Nexgen Power Systems in 2010 as a Principal GaN Device Engineer, where they currently hold the position.

Andrew Edwards earned a Bachelor of Science (BS) degree in Electrical Engineering from Virginia Tech. Later on, they pursued further education at George Mason University and completed a Master of Science (MS) and a Doctorate (Ph.D) in Solid State Electronics.