Fatme Abed Ali is a dedicated researcher currently pursuing a Doctor's Degree in Power Electronics at Université Grenoble Alpes since October 2019. Concurrently, Fatme serves as a PhD Student at both VEDECOM and G2Elab, focusing on the design of an embedded Power Module for Silicon Carbide MOSFETs, emphasizing low parasitic inductance and symmetrical capacitances through self-compensation techniques and flip chip technology. Prior experience includes a Master 2 Thesis at Laboratoire d’electrotechnique et d’electronique de puissance de Lille, where optimization of PCB layouts for GaN-based power converters was undertaken, as well as internships at Khatib & Alami involving electrical installations and drawings. Fatme holds multiple engineering degrees from Lebanese University and Nantes Université, culminating in a Master's degree in Electrical Energy.
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