P.S. Raghavan

Dr. P.S. Raghavan is GT Advanced Technologies’ Chief Technology Officer. Dr. Raghavan brings over 26 years of industrial and academic experience in crystal growth instrumentation, crystal growth of semiconducting (Silicon, III-V and II-VI) materials, Oxides (Al203, LiNbO3), NLO materials, scintillation detecting materials and advanced electronic and photonic devices. His decades of experience in developing technology and capital equipment has resulted in the successful commercialization of industry leading silicon, Sapphire and silicon carbide crystal growth furnaces for the solar, LED, and consumer and power electronics manufacturing industries.

Prior to joining GT in 2002, he was involved in crystal growth research and held positions as Visiting Professor, Department of Electrical Engineering, NTHU, Hsinchu, Taiwan, Assistant Professor, Crystal Growth Centre, Anna University, and Reader and Head Instrumentation, Alagappa University, India.

Dr. Raghavan holds a master’s degree in physics, a master of philosophy degree in physics and a Ph.D. in crystal growth of III-V compounds. He worked as postdoctoral fellow at internationally acclaimed laboratories worldwide and has 60 research publications in international journals, 4 patents and 100 publications in national/International conferences. He has co-authored 3 books on crystal growth and has earned several international awards for his contribution to the field of crystal growth technology.