Stanislav Soloviev

Stanislav Soloviev has been working in the semiconductor industry since 2000. Stanislav began their career as a Research Associate Professor and Research Scientist at the University of South Carolina-Columbia. In 2004, they joined GE Global Research as a Senior Device Design and Technology Engineer, where they developed and optimized SiC process technologies, planned DOE, and conducted data analysis. Stanislav also developed and optimized Silicon Carbide (SiC) devices, such as Thyristors, PIN diodes, avalanche photo-detectors, MOSFETs, and transient voltage suppressors (TVS). Additionally, they conducted device reliability studies (HTRB, HTGB, etc.) and failure mode analysis of failed devices after both parametric and reliability tests. In 2017, they moved to iDEAL Semiconductor as a Senior Device Engineer.

Stanislav Soloviev obtained their Ph.D. in Electrical Engineering (Solid-State Electronics) from Taganrog State Radio Technical University, specializing in Semiconductor Device Design and Technology.