Bin Lu

Dr. Bin Lu co-founded Finwave Semiconductor after completing his Ph.D. degree from MIT.

Dr. Lu has made several groundbreaking discoveries in GaN transistor technology ranging from GaN-on-Si high voltage devices, normally-off technology, to GaN FinFET technology. He is the inventor of many key technologies for Finwave, has authored over 22 peer-reviewed publications and has been issued more than 18 patents.

Bin is the recipient of the 2012 IEEE Electronic Device Society George Smith Award. He received his B.S. degree from Tsinghua University and S.M. and Ph.D. degrees from MIT.