Jutao Jiang

Jutao Jiang has a long history of work experience in the semiconductor industry. From 1999 to 2004, they worked as a Graduate Student at the Center for Quantum Devices, Northwestern University, where they designed and fabricated nanoscale devices via electron beam lithography, developed III-V compound semiconductor material growth technique on Silicon substrate, and designed quantum well infrared photodetector (QWIP) devices based on InGaAsP material system. From 2004 to 2007, they worked as a CMOS Imager Characterization Engineer at Micron Technology, where they performed CMOS imaging sensor pixel and array level characterization, and developed a complicated pixel level modeling software for pixel/sensor/CFA performance simulation based on design and process parameters. From 2007 to 2008, they worked as Manager of the CMOS Imager Characterization Group at MagnaChip Semiconductor, where they managed a small R&D team to support CMOS sensor/pixel characterization tasks and developed pixel characterization methodology for test chips of 1.75um and 1. From 2008 to present, they have served as Director of Device Characterization at SIONYX.

Jutao Jiang began their educational journey in 1991 when they earned a B.S. in Physics from Jilin University. Jutao then went on to earn an M.S. in Physics from Peking University in 1998. Finally, in 2004, they earned a Ph.D. in Electrical & Computer Engineering from Northwestern University.